Molecular Beam Epitaxy System and UHV technology.
نویسندگان
چکیده
منابع مشابه
Basics of Molecular Beam Epitaxy (MBE)
A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...
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We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...
متن کاملUnstable Growth and Coarsening in Molecular-Beam Epitaxy
The coarsening dynamics of three-dimensional islands on a growing film is discussed. It is assumed that the origin of the initial instability of a planar surface is the Ehrlich-Schwoebel step-edge barrier for adatom diffusion. Two mechanisms of coarsening are identified: (i) surface diffusion driven by an uneven distribution of bonding energies, and (ii) mound coalescence driven by random depos...
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Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...
متن کاملHydration and Reduction of Molecular Beam Epitaxy Grown VO
Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article Supported vanadium oxides processed under ambient environments have been studied by using X-ray standing...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1992
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.35.939